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M6MGB321S8TP

CMOS SRAM

M6MGB321S8TP Features

* DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max.) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max.) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi Chip

M6MGB321S8TP General Description

M6MGB/T321S8TP provides for Software Lock Release function. Usually, all memory blocks are locked and can not be programed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, can be excuted. 3.0V-.

M6MGB321S8TP Datasheet (92.87 KB)

Preview of M6MGB321S8TP PDF

Datasheet Details

Part number:

M6MGB321S8TP

Manufacturer:

Renesas ↗

File Size:

92.87 KB

Description:

Cmos sram.
www.DataSheet4U.com Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,.

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M6MGB321S8TP CMOS SRAM Renesas

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