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M6MGB321S8TP Datasheet CMOS SRAM

Manufacturer: Renesas

Download the M6MGB321S8TP datasheet PDF. This datasheet also includes the M6MGT321S8TP variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M6MGT321S8TP_Renesas.pdf) that lists specifications for multiple related part numbers.

General Description

M6MGB/T321S8TP provides for Software Lock Release function.

Usually, all memory blocks are locked and can not be programed or erased, when F-WP# is low.

Using Software Lock Release function, program or erase operation 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, can be excuted.

Overview

www.DataSheet4U.com Renesas LSIs M6MGB/T321S8TP 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.

Key Features

  • DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max. ) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max. ) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP. M6MGB/T321S8TP is suitable for the.