* DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max.) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max.) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi Chip
M6MGB321S8TP Datasheet (92.87 KB)
M6MGB321S8TP
92.87 KB
Cmos sram.
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Renesas LSIs
M6MGB/T321S8TP
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.0V-ONLY FLASH MEMORY & 8,.
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