N0412N - N-Channel MOSFET

Renesas

Key Features

Low on-state resistance : RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A).
Low Ciss : Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V).
High current : ID(DC) = ±100 A.
RoHS Compliant.
Quality Grade : Standard.

N0412N n-channel mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	N0412N
Manufacturer	Renesas
File Size	478.88 KB
Description	N-Channel MOSFET
Datasheet	N0412N Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
N0416SC020	Phase Control Thyristor Stud	IXYS
N0416SC040	Phase Control Thyristor	IXYS
N0416SC080	Phase Control Thyristor Stud	IXYS
N0416SC080	Phase Control Thyristor	IXYS
N0416SD020	Phase Control Thyristor Stud	IXYS

Other Datasheets by Renesas

Part Number	Description
N0413N	N-channel MOSFET
N0434N	N-channel MOSFET
N0439N	N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N0412N N-channel MOSFET 40 V, 100 A, 3.7 mΩ Preliminary Data Sheet R07DS0554EJ0200 Rev.2.00 2020.6.10 Features • Low on-state resistance : RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss : Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current : ID(DC) = ±100 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching Ordering Information Part No. Package Packing N0412N-S19-AY TO-220AB, Pb-free Note1 50 pcs / Magazine (Tube) Note: 1. Pb-free means that this product does not contain lead in the external electrode.