N0439N
Description
This product is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
- Low Ciss : Ciss = 3900 p F TYP. ( VDS = 25 V )
Ordering Information
Part No. N0439N-S19-AY- 1
LEAD PLATING Pure Sn (Tin)
PACKING Tube 50 p/tube
Note:
- 1. Pb-free ( This product does not contain Pb in the external electrode. )
TO-220
Package TO-220 1.9g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) Drain Current (pulse)
- 1 Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Repetitive Avalanche Current
- 2 Repetitive Avalanche Energy
- 2 Notes: ∗1. TC=25℃、Pw ≤ 10 μs, Duty Cycle ≤ 1%
∗2. RG = 25Ω, VGS = 20 Æ 0V
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 ± 20 ± 90
± 360 147 1.8 175 -55 to...
