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NE5531079A - 7.5V OPERATION SILICON RF POWER LDMOS FET

Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.

Features

  • High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
  • High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
  • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
  • Single supply : VDS = 7.5 V MAX.

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Datasheet Details

Part number NE5531079A
Manufacturer Renesas Electronics
File Size 154.22 KB
Description 7.5V OPERATION SILICON RF POWER LDMOS FET
Datasheet download datasheet NE5531079A Datasheet
Additional preview pages of the NE5531079A datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply voltage. FEATURES • High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) • High linear gain : GL = 20.5 dB TYP. (VDS = 7.
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