Datasheet Details
| Part number | NP55N04SLG |
|---|---|
| Manufacturer | Renesas |
| File Size | 242.99 KB |
| Description | MOS FIELD EFFECT TRANSISTOR |
| Datasheet |
 NP55N04SLG Datasheet
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General Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Channel temperature 175 degree rating.
- Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A).
- Low input capacitance.
- Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD.
