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NP55N04SLG - MOS FIELD EFFECT TRANSISTOR

Renesas

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Datasheet Details

Part number	NP55N04SLG
Manufacturer	Renesas
File Size	242.99 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP55N04SLG-Renesas.pdf

NP55N04SLG Product details

Description

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Channel temperature 175 degree rating.
Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A).
Low input capacitance.
Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD.

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Published: May 15, 2016 |