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NP55N055SUG - MOS FIELD EFFECT TRANSISTOR

General Description

The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A).
  • Low Ciss: Ciss = 3500 pF TYP. (TO-252).

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Datasheet Details

Part number NP55N055SUG
Manufacturer Renesas
File Size 185.22 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP55N055SUG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N055SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP55N055SUG TO-252 (MP-3ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low Ciss: Ciss = 3500 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±55 ±220 Total Power Dissipation (TC = 25°C) PT1 77 Total Power Dissipation (TA = 25°C) Channel Temperature PT2 1.