MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
TO-220 (MP-25K) typ. 1.9 g
• Super low on-state resistance
RDS(on) = 6.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Channel temperature 175 degree rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
−55 to +175
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
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Document No. D18663EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP(K)
Printed in Japan
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