* Super low on-state resistance RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
* Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified Outline TO-263(MP-25ZP) Equivalent circuit Remark: Strong electric field, when exposed to this dev
NP60N06PDK Datasheet (427.44 KB)
NP60N06PDK
427.44 KB
N-channel mosfet.
NP60N06PDK 60 V 60 A N-channel Power MOS FET Application: Automotive Data Sheet R07DS1296EJ0200 Rev.2.00 May 24, 2018 Descriptio.
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