NP60N06PDK Datasheet | Renesas

ription NP60N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features - Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A) - Low Ciss: Ciss = 2400 p F TYP. (VDS = 25 V) - Designed for automotive application and AEC-Q101 qualified Outline TO-263(MP-25ZP) Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. Lead Plating Packing NP60N06PDK-E1-AY - 1 NP60N06PDK-E2-AY - 1 Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: - 1. Pb-free (This product does not contain Pb in the external electrode) Package TO-263(MP-25ZP) R07DS1296EJ0200 Rev.2.00 May 24, 2018 Page 1 of 7 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) 1- 3 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current 2- 3 Repetitive Avalanche Energy 2- 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 60 ±20 ±60 ±240 105 1.8...