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NP60N06PDK - N-Channel MOSFET

Description

NP60N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A).
  • Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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NP60N06PDK 60 V – 60 A – N-channel Power MOS FET Application: Automotive Data Sheet R07DS1296EJ0200 Rev.2.00 May 24, 2018 Description NP60N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Outline TO-263(MP-25ZP) Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No.
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