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NP60N04MUG - N-Channel Power MOSFET

Datasheet Summary

Description

The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Note Pb-free (This product does not contain Pb in the external electrode).

Features

  • Super low on-state resistance RDS(on) = 6.3 mΩ MAX. (VGS = 10 V, ID = 30 A).
  • Channel temperature 175 degree rated (TO-220).

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Datasheet preview – NP60N04MUG

Datasheet Details

Part number NP60N04MUG
Manufacturer Renesas
File Size 257.22 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NP60N04MUG Datasheet
Additional preview pages of the NP60N04MUG datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP60N04MUG-S18-AY Note Pure Sn (Tin) Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode). PACKAGE TO-220 (MP-25K) typ. 1.9 g FEATURES • Super low on-state resistance RDS(on) = 6.3 mΩ MAX.
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