Datasheet Summary
-40V
- -83A
- P-channel Power MOS FET Application : Automotive
R07DS1521EJ0100 Rev.1.00
Jun. 17, 2022
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance : RDS(on) = 5.3 mī Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 8.0 mī Max. ( VGS = -4.5 V, ID = -41.5 A )
- Low input capacitance : Ciss = 9820 pF Typ.
- Designed for automotive application and AEC-Q101 qualified.
- Pb-free (This product does not contain Pb in the external electrode)
Outline
Drain
12 3
1. Gate 2. Drain 3. Source 4. Drain(Fin)
MP-25ZP...
