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NP84N075DUE - N-CHANNEL POWER MOS FET

Download the NP84N075DUE datasheet PDF. This datasheet also covers the NP84N075EUE variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A).
  • Low input capacitance Ciss = 5600 pF TYP. (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP84N075EUE-Renesas.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N075EUE, NP84N075KUE NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP84N075EUE-E1-AY Note1, 2 NP84N075EUE-E2-AY Note1, 2 NP84N075KUE-E1-AY Note1 NP84N075KUE-E2-AY Note1 NP84N075CUE-S12-AZ Note1, 2 NP84N075DUE-S12-AY Note1, 2 NP84N075MUE-S18-AY Note1 NP84N075NUE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.
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