NP84N075MUE Datasheet | Renesas

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP84N075EUE-E1-AY Note1, 2 NP84N075EUE-E2-AY Note1, 2 NP84N075KUE-E1-AY Note1 NP84N075KUE-E2-AY Note1 NP84N075CUE-S12-AZ Note1, 2 NP84N075DUE-S12-AY Note1, 2 NP84N075MUE-S18-AY Note1 NP84N075NUE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES - Channel temperature 175 degree rated - Super low on-state resistance RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) - Low input capacitance Ciss = 5600 p F TYP. (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14675EJ4V0DS00 (4th edition) Date Published October 2007 NS 2002, 2007 Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Note1 Drain Current (pulse) Note2 VGSS ID(DC) ID(pulse) Total Power Dissipation (TA = 25°C) PT1 Total Power Dissipation (TC = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy...