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NP88N04KUG - N-CHANNEL POWER MOS FET

General Description

The NP88N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on) = 2.9 mΩ MAX. (VGS = 10 V, ID = 44 A).
  • Low Ciss: Ciss = 10000 pF TYP.

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Datasheet Details

Part number NP88N04KUG
Manufacturer Renesas
File Size 208.29 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP88N04KUG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04KUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP88N04KUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP88N04KUG TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.9 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low Ciss: Ciss = 10000 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±88 ±352 Total Power Dissipation (TA = 25°C) PT1 1.