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NP88N03KDG - N-CHANNEL POWER MOS FET

Description

The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on)1 = 2.4 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 3.9 mΩ MAX. (VGS = 4.5 V, ID = 44 A).
  • Low Ciss: Ciss = 9000 pF TYP. (VDS = 25 V).
  • 4.5 V gate drive type.

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Datasheet Details

Part number NP88N03KDG
Manufacturer Renesas
File Size 199.92 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP88N03KDG Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N03KDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP88N03KDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 2.4 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 3.9 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low Ciss: Ciss = 9000 pF TYP. (VDS = 25 V) • 4.5 V gate drive type ORDERING INFORMATION PART NUMBER PACKAGE NP88N03KDG TO-263 (MP-25ZK) (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±88 ±352 Total Power Dissipation (TA = 25°C) PT1 1.
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