NP88N04EHE Overview
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
- Low input capacitance Ciss = 7300 pF TYP
