NP89N04PDK
Description
The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A)
- Low Ciss: Ciss = 3900 p F TYP. (VDS = 25 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP89N04PDK-E1-AY
- 1 Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP89N04PDK-E2-AY
- 1
Taping (E2 type)
Note:
- 1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
- 1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current
- 2, 3 Repetitive Avalanche Energy
- 2, 3
Symbol VDSS VGSS ID(DC) ID(pulse)...
