NP89N04NUK Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
NP89N04NUK Key Features
- Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A)
- Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified