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NX5313EH - LASER DIODE

This page provides the datasheet information for the NX5313EH, a member of the NX5313 LASER DIODE family.

Description

The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

These devices are designed for application up to 1.25 Gb/s.

FTTH PON (B-PON, G-PON, GE-PON 10 km) system

Features

  • Optical output power Po = 13.0 mW.
  • Low threshold current lth = 6 mA.
  • Differential Efficiency ηd = 0.5 W/A.
  • Wide operating temperature range TC =.
  • 40 to +85°C.
  • InGaAs monitor PIN-PD.
  • CAN package φ 5.6 mm.
  • Focal point 6.35 mm.
  • LD beam angle optimized for 8 degree angled SMF The information in this document is subject to change without notice. Before using this document, please confirm that this is the la.

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PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power Po = 13.0 mW • Low threshold current lth = 6 mA • Differential Efficiency ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 6.35 mm • LD beam angle optimized for 8 degree angled SMF The information in this document is subject to change without notice.
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