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NX5313EH, NX5313 LASER DIODE

NX5313EH Description

PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE .
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

NX5313EH Features

* Optical output power Po = 13.0 mW
* Low threshold current lth = 6 mA
* Differential Efficiency ηd = 0.5 W/A
* Wide operating temperature range TC =
* 40 to +85°C
* InGaAs monitor PIN-PD
* CAN package φ 5.6 mm
* Focal point

NX5313EH Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: NX5313EH, NX5313. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NX5313EH, NX5313
Manufacturer
Renesas ↗
File Size
132.79 KB
Datasheet
NX5313-Renesas.pdf
Description
LASER DIODE
Note
This datasheet PDF includes multiple part numbers: NX5313EH, NX5313.
Please refer to the document for exact specifications by model.

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LASER DIODE Renesas
Renesas NX5313EH-like datasheet