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R1LV0408D - 4M SRAM

Datasheet Summary

Description

The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies.

R1LV0408D Series has realized higher density, higher performance and low power consumption.

Features

  • Single 3 V supply: 2.7 V to 3.6 V.
  • Access time: 55/70 ns (max).
  • Power dissipation:  Standby: 3 µW (typ).
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Directly TTL compatible.  All inputs and outputs.
  • Battery backup operation. Rev.1.00, May.24.2007, page 1 of 12 R1LV0408D Series Ordering Information Type No. R1LV0408DSP-5S% R1LV0408DSP-7L% R1LV0408DSB-5S% R1LV0408DSB-7L% R1LV0408DSA-5S% R1LV0.

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Datasheet Details

Part number R1LV0408D
Manufacturer Renesas
File Size 145.37 KB
Description 4M SRAM
Datasheet download datasheet R1LV0408D Datasheet
Additional preview pages of the R1LV0408D datasheet.

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Full PDF Text Transcription

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R1LV0408D Series 4M SRAM (512-kword × 8-bit) REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density, higher performance and low power consumption. The R1LV0408D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32pin TSOP II and 32-pin STSOP. Features • Single 3 V supply: 2.7 V to 3.6 V • Access time: 55/70 ns (max) • Power dissipation:  Standby: 3 µW (typ) • Equal access and cycle times • Common data input and output.  Three state output • Directly TTL compatible.  All inputs and outputs • Battery backup operation. Rev.1.
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