R1Q2A7209ABB Datasheet - Renesas

72-Mbit QDRII SRAM

R1Q2A7209ABB Features

* Power Supply

* 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) Clock

* Fast clock cycle time for high bandwidth

* Two input clocks (K and /K) for precise DDR timing at clock rising edges only

* Two input clocks for output data (C and /C) to minimize clock skew and f

R1Q2A7209ABB General Description

The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the R1Q2A7209 is a 8,388,608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous periphe.

R1Q2A7209ABB Datasheet (706.27 KB)