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R1Q3A7236ABB Datasheet

Manufacturer: Renesas
R1Q3A7236ABB datasheet preview

Datasheet Details

Part number R1Q3A7236ABB
Datasheet R1Q3A7236ABB-Renesas.pdf
File Size 681.34 KB
Manufacturer Renesas
Description 72-Mbit SRAM
R1Q3A7236ABB page 2 R1Q3A7236ABB page 3

R1Q3A7236ABB Overview

It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration.

R1Q3A7236ABB Key Features

  • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • Fast clock cycle time for high bandwidth
  • Two input clocks (K and /K) for precise DDR timing at clock rising edges only
  • Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches
  • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
  • Clock-stop capability with s restart
  • Separate independent read and write data ports with concurrent transactions
  • 100% bus utilization DDR read and write operation
  • HSTL I/O
  • User programmable output impedance

R1Q3A7236ABB Applications

  • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • Fast clock cycle time for high bandwidth
  • Two input clocks (K and /K) for precise DDR timing at clock rising edges only
  • Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches
  • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
  • Clock-stop capability with s restart
  • Separate independent read and write data ports with concurrent transactions
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