R1RP0416DGE-2SR Renesas Datasheet

R1RP0416DGE-2SR Key Features

• Single 5.0V supply: 5.0V ± 10%
• Access time: 10ns / 12ns (max)
• pletely static memory
• Equal access and cycle times
• Directly TTL patible
• Operating current: 170mA / 160mA (max)
• TTL standby current: 40mA (max)
• CMOS standby current : 5mA (max)
• Data retention current : 0.5mA (max) (L-version) : 0.2mA (max) (S-version)
• Data retention voltage: 2V (min) (L-version , S-version)