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R1RP0416DGE-2SR - 4M High Speed SRAM

Download the R1RP0416DGE-2SR datasheet PDF (R1RP0416D included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4m high speed sram.

Description

The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 5.0V supply: 5.0V ± 10%.
  • Access time: 10ns / 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 170mA / 160mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max) : 1.0mA (max) (L-version) : 0.5mA (max) (S-version).
  • Data retention current : 0.5mA (max) (L-version) : 0.

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Note: The manufacturer provides a single datasheet file (R1RP0416D-Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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R1RP0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0284EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Features • Single 5.0V supply: 5.
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