R1RP0416DSB-0PR - 4M High Speed SRAM

Product Overview

Renesas

Part number	R1RP0416DSB-0PR
Manufacturer	Renesas
File Size	543.10 KB
Description	4M High Speed SRAM
Datasheet	R1RP0416DSB-0PR Datasheet
Note	This datasheet PDF includes multiple part numbers: R1RP0416DSB-0PR, R1RP0416D. Please refer to the document for exact specifications by model.
Additional preview pages of the R1RP0416DSB-0PR datasheet.

The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Single 5.0V supply: 5.0V ± 10%.
Access time: 10ns / 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 170mA / 160mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max) : 1.0mA (max) (L-version) : 0.5mA (max) (S-version).
Data retention current : 0.5mA (max) (L-version) : 0.

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Published: Aug 6, 2020 |