R1RP0416DSB-2PI Datasheet | Renesas

Description The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Features - Single 5.0V supply: 5.0V ± 10% - Access time: 10ns /12ns (max) - pletely static memory ⎯ No clock or timing strobe required - Equal access and cycle times - Directly TTL patible ⎯ All inputs and outputs - Operating current: 170m A / 160m A (max) - TTL standby current: 40m A (max) - CMOS standby current : 5m A (max) - Center VCC and VSS type pin out - Temperature range: - 40 to +85°C Ordering Information Type No. R1RP0416DGE-2PI R1RP0416DSB-0PI R1RP0416DSB-2PI Access time 12ns 10ns 12ns Package 400-mil 44-pin plastic SOJ 400-mil 44-pin plastic TSOPII R10DS0285EJ0100 Rev.1.00 Nov.18.19 Page 1 of 12 R1RP0416DI Series Pin Arrangement Pin Description A0 to A17 I/O1 to I/O16 CS# OE# WE# UB# LB# VCC VSS NC Pin name Address input Data input/output Chip select Output enable Write enable Upper byte select Lower byte select Power supply Ground No connection Function R10DS0285EJ0100 Rev.1.00 Nov.18.19 Page 2 of 12 R1RP0416DI Series Block Diagram R10DS0285EJ0100 Rev.1.00 Nov.18.19 Page 3 of 12 R1RP0416DI Series Operation Table CS# OE# WE# LB# UB# H  LHH  L LHL L L LHLH L LHHL L LHHH LLLL L  L LH L LHL L  LHH Note: H: VIH, L: VIL,...