* For Automotive application
* Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)
* Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
* Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage De
R2J25953SP Datasheet (174.31 KB)
R2J25953SP
174.31 KB
H-bridge control high speed power switching.
Preliminary Datasheet R2J25953SP H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET R07DS0044EJ0400 Rev.4.00 May .
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