* Super low on-state resistance RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A )
* Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V )
* Designed for automotive application and AEC-Q101 qualified
* Pb-free (This product does not contain Pb in the external electrode
RBA160N04AHPF-4UA01 Datasheet (417.94 KB)
RBA160N04AHPF-4UA01
417.94 KB
N-channel power mosfet.
RBA160N04AHPF-4UA01 RBA160N04AHPF-4UA01 40V 160A N-channel Power MOS FET Application : Automotive Data Sheet R07DS1344EJ0200 Rev.
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