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RBA160N04AHPF-4UA01 - N-channel Power MOSFET

General Description

The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A ).
  • Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V ).
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBA160N04AHPF-4UA01 RBA160N04AHPF-4UA01 40V – 160A – N-channel Power MOS FET Application : Automotive Data Sheet R07DS1344EJ0200 Rev.2.00 Jul. 8, 2020 Description The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A ) • Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V ) • Designed for automotive application and AEC-Q101 qualified • Pb-free (This product does not contain Pb in the external electrode) Ordering Information Part No. RBA160N04AHPF-4UA01#GB0 Quantity 800pcs/reel Taping Shipping container Outline 8 G1 D2 3S 4S 5S 6S 7S 1. Gate 2. Drain 3, 4, 5, 6, 7. Source 8.