RBN25H125S1FPQ-A0
Features
- Trench gate and thin wafer technology (G8H series)
- High speed switching
- Built in fast recovery diode in one package
- Short circuit withstands time (10 µs min.)
- Low collector to emitter saturation voltage
- Applications: UPS, Welding, photovoltaic
VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
- Quality grade: Standard
Key Performance
Type RBN25H125S1FPQ-A0
VCES 1250 V
IC 25 A
VCE(sat), TC=25°C 1.8 V
IF 15 A t SC 10 µs
Tj 175 °C
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
4 123
1. Gate
2. Collector 3. Emitter
4. Collector
R07DS1378EJ0141 Rev.1.41 Oct.14.2021
Page 1 of 11
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
Gate to emitter voltage Collector current
Tc = 25...
