RBN25H125S1FPQ-A0 igbt equivalent, igbt.
* Trench gate and thin wafer technology (G8H series)
* High speed switching
* Built in fast recovery diode in one package
* Short circuit withstands ti.
UPS, Welding, photovoltaic
VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) inverters, Power converter syst.
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