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Renesas Electronics Components Datasheet

RBN25H125S1FPQ-A0 Datasheet

IGBT

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RBN25H125S1FPQ-A0
1250V - 25A - IGBT
Power Switching
Data Sheet
R07DS1378EJ0132
Rev.1.32
Jun 19, 2019
Features
Trench gate and thin wafer technology (G8H series)
High speed switching
Built in fast recovery diode in one package
Short circuit withstands time (10 µs min.)
Low collector to emitter saturation voltage
Applications: UPS, Welding, photovoltaic
VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) inverters, Power converter system
Quality grade: Standard
Key Performance
Type
RBN25H125S1FPQ-A0
VCES
1250 V
IC
25 A
VCE(sat), TC=25C
1.8 V
IF
15 A
tSC
10 s
Tj
175 C
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
R07DS1378EJ0132 Rev.1.32
Jun 19, 2019
Page 1 of 11


Renesas Electronics Components Datasheet

RBN25H125S1FPQ-A0 Datasheet

IGBT

No Preview Available !

RBN25H125S1FPQ-A0
Absolute Maximum Ratings
(Tc = 25 C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
1250
V
Gate to emitter voltage
VGES
30
V
Collector current
Tc = 25 C
IC
50
A
Tc = 100 C
IC
25
A
Collector peak current
IC(peak) Note1
100
A
Diode forward current
Tc = 25 C
IF
30
A
Tc = 100 C
IF
15
A
Diode forward peak current
IF(peak) Note1
100
A
Collector power dissipation
PC Note 2
223
W
Junction temperature
Tj Note2
175
C
Storage temperature
Tstg
–55 to +150
C
Note:
Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage
of Semiconductor Devices) and individual reliability data.
Notes: 1. PW 10 s, duty cycle 1 %
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175 °C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 °C.
Thermal Resistance Characteristics
Item
Symbol
Max. Value Note3
Junction to case thermal resistance (IGBT)
Rth(j-c)
0.67
Junction to case thermal resistance (Diode)
Rth(j-c)
2.10
Notes: 3. This data is the designed target maximum value on Renesas’s measurement condition.
Unit
C/W
C/W
R07DS1378EJ0132 Rev.1.32
Jun 19, 2019
Page 2 of 11



Part Number RBN25H125S1FPQ-A0
Description IGBT
Maker Renesas
Total Page 3 Pages
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