RBN25H125S1FPQ-A0 Overview
Key Features
- Trench gate and thin wafer technology (G8H series)
- High speed switching
- Built in fast recovery diode in one package
- Short circuit withstands time (10 µs min.)
- Low collector to emitter saturation voltage
| Part | RBN25H125S1FPQ-A0 |
|---|---|
| Description | IGBT |
| Manufacturer | Renesas |
| Size | 307.14 KB |
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