Datasheet4U Logo Datasheet4U.com

RBN25H125S1FPQ-A0 - IGBT

Features

  • Trench gate and thin wafer technology (G8H series).
  • High speed switching.
  • Built in fast recovery diode in one package.
  • Short circuit withstands time (10 µs min. ).
  • Low collector to emitter saturation voltage.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
RBN25N125S1UFWA IGBT
RBN200N180S2HFWA IGBT
RBN100N180S2HFWA IGBT
RBN150N180S2HFWA IGBT
RBN40H125S1FPQ-A0 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RBN25H125S1FPQ-A0 1250V - 25A - IGBT Power Switching Datasheet R07DS1378EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technology (G8H series) • High speed switching • Built in fast recovery diode in one package • Short circuit withstands time (10 µs min.) • Low collector to emitter saturation voltage • Applications: UPS, Welding, photovoltaic VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system • Quality grade: Standard Key Performance Type RBN25H125S1FPQ-A0 VCES 1250 V IC 25 A VCE(sat), TC=25°C 1.8 V IF 15 A tSC 10 µs Tj 175 °C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate G 2. Collector 3. Emitter 4. Collector E R07DS1378EJ0141 Rev.1.41 Oct.14.
Published: |