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RJF0610DSP Datasheet N-Channel MOSFET

Manufacturer: Renesas

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General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Overview

Target Specifications Datasheet RJF0610DSP 60V , 1.5A Silicon N channel Thermal FET Power Switching R07DS0560EJ0301 Rev.3.

Key Features

  • Logic level operation (5 to 6 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Temperature hysteresis type.
  • High density mounting.
  • Power supply voltage applies 12 V and 24 V. Outline.

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