Datasheet4U Logo Datasheet4U.com

RJF0619JPE Datasheet N-Channel MOSFET

Manufacturer: Renesas

📥 Download Datasheet

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Overview

Target Specifications Datasheet RJF0619JPE 60V, 30A Silicon N Channel Thermal FET Power Switching R07DS1072EJ0100 Rev.1.

Key Features

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 Compliant.
  • High endurance capability against to ESD. Outline.

More Datasheets from Renesas

Part Number Description
RJF0619JPD N-Channel Thermal FET
RJF0610DSP N-Channel MOSFET
RJF0610JSP N-Channel MOSFET
RJF0611DPD N-Channel MOSFET
RJF0611DPE N-Channel MOSFET
RJF0611JPD N-Channel MOSFET
RJF0611JPE N-Channel MOSFET
RJF0612DPE N-Channel MOSFET
RJF0612JPE N-Channel Thermal FET
RJF0613JSP N-Channel MOSFET