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RJH60D1DPP-A0 Datasheet IGBT

Manufacturer: Renesas

Overview: RJH60D1DPP-A0 600V - 10A - IGBT Power Switching.

Key Features

  • Trench gate and thin wafer technology.
  • Built in fast recovery diode (100 ns typ. ) in one package.
  • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C).
  • High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load).
  • Short circuit withstand time (5 s typ. ).

RJH60D1DPP-A0 Distributor

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