RJH60D1DPP-A0 igbt equivalent, igbt.
* Trench gate and thin wafer technology
* Built in fast recovery diode (100 ns typ.) in one package
* Low collector to emitter saturation voltage
VCE(sat) = 1.
Inverter
* Quality grade: Standard
Datasheet
R07DS1458EJ0110 Rev.1.10 Mar.01.20
Key Performance
Type RJH60D1DPP-A.
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