RJH60D1DPP-A0
Overview
- Trench gate and thin wafer technology
- Built in fast recovery diode (100 ns typ.) in one package
- Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C)
- High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load)
- Short circuit withstand time (5 s typ.)
