RJH60D1DPE - Silicon N Channel IGBT

Renesas

Key Features

High breakdown-voltage.
Low on-voltage.
Built-in diode www. DataSheet4U. com Preliminary REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Outline.

RJH60D1DPE silicon n channel igbt by Renesas - Datasheet Preview

Datasheet Details

Part number	RJH60D1DPE
Manufacturer	Renesas
File Size	187.93 KB
Description	Silicon N Channel IGBT
Datasheet	RJH60D1DPE Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
RJH60D1DPP-A0	IGBT	Renesas
RJH60D0DPM	IGBT	Renesas
RJH60D0DPQ-A0	IGBT	Renesas
RJH60D3DPP-M0	IGBT	Renesas
RJH60D5DPM	IGBT	Renesas

Other Datasheets by Renesas

Part Number	Description
RJH60D1DPP-M0	Silicon N-Channel IGBT
RJH60D0DPK	Silicon N Channel IGBT
RJH60D2DPE	Silicon N Channel IGBT
RJH60D2DPP-M0	Silicon N Channel IGBT
RJH60D3DPE	Silicon N Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

RJH60D1DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1840-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emitter 4. Collecotor Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to Emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.