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RJH60D1DPP-A0 - IGBT

Key Features

  • Trench gate and thin wafer technology.
  • Built in fast recovery diode (100 ns typ. ) in one package.
  • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C).
  • High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load).
  • Short circuit withstand time (5 s typ. ).

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RJH60D1DPP-A0 600V - 10A - IGBT Power Switching Features  Trench gate and thin wafer technology  Built in fast recovery diode (100 ns typ.) in one package  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C)  High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load)  Short circuit withstand time (5 s typ.)  Applications: Inverter  Quality grade: Standard Datasheet R07DS1458EJ0110 Rev.1.10 Mar.01.20 Key Performance Type RJH60D1DPP-A0 VCES 600 V IC 10 A VCE(sat), TC=25°C 1.9 V Tj 150 C Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) C 12 3 G E 1. Gate 2. Collector 3. Emitter R07DS1458EJ0110 Rev.1.10 Mar.01.