RJH60D0DPM
RJH60D0DPM is manufactured by Renesas.
Preliminary Datasheet
600V
- 22A
- IGBT Application: Inverter
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0156EJ0300 Rev.3.00 Apr 19, 2012
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
1. Gate 2. Collector 3. Emitter
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