Part number:
RJH60D7BDPQ-E0
Manufacturer:
File Size:
322.23 KB
Description:
Igbt.
Datasheet Details
RJH60D7BDPQ-E0 Features
* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (25 ns typ.) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 50 n
Datasheet Details
RJH60D7BDPQ-E0
322.23 KB
Igbt.
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Renesas Electronics Corporation
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| RJH60D7BDPQ-E0-T2 |
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