RJH60D7BDPQ-E0 Key Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage
- Built in fast recovery diode (25 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching
- Part: RJH60D7BDPQ-E0
- Description: IGBT
- Manufacturer: Renesas
- Size: 322.23 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJH60D7ADPK | IGBT |
| RJH60D7DPM | IGBT |
| RJH60D7DPQ-E0 | IGBT |
| RJH60D0DPM | IGBT |
| RJH60D0DPQ-A0 | IGBT |