RJH60M2DPE Datasheet | Renesas

Features - Short circuit withstand time (8 s typ.) - Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) - Built in fast recovery diode (100 ns typ.) in one package - Trench gate and thin wafer technology - High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0531EJ0100 Rev.1.00 Aug 30, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E .Data Sheet.net/ 1. Gate 2. Collector 3. Emitter 4. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 i DF i D(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 25 12 50 12 50 63 1.98 4.2 150 - 55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C R07DS0531EJ0100 Rev.1.00 Aug 30, 2011 Page 1 of 3 Datasheet pdf - http://..co.kr/ Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES / IR IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min - - 5 - - - - - - - - - - - - 6 Typ - - - 1.9 2.3 430 40 15 19 4 8 30 15 90 80 8 Max 5 ±1 7 2.5 - - - - - - - - - - - - Unit A A V V V p F p F p F n C n C n C ns ns ns ns s Test Conditions...