RJH60M2DPP-M0 Datasheet IGBT

Manufacturer: Renesas

Datasheet Details

Preliminary Datasheet RJH60M2DPP-M0 600 V - 12 A - IGBT Application:.

Short circuit withstand time (8 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0530EJ0100 Rev.1.00 Sep 02, 2011 Outline.