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RJH60M3DPE Datasheet, Renesas

RJH60M3DPE igbt equivalent, igbt.

RJH60M3DPE Avg. rating / M : 1.0 rating-12

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RJH60M3DPE Datasheet

Features and benefits


* Short circuit withstand time (8 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
* Built i.

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TAGS

RJH60M3DPE
IGBT
RJH60M3DPP-M0
RJH60M3DPQ-A0
RJH60M0DPQ-A0
Renesas

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