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RJK0631JPD - Silicon N-Channel MOS FET

Description

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Features

  • For Automotive.

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Datasheet Details

Part number RJK0631JPD
Manufacturer Renesas Electronics
File Size 96.97 KB
Description Silicon N-Channel MOS FET
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Full PDF Text Transcription

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RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching Features • For Automotive application • Low on-resistance : RDS(on) = 12 mΩ typ. • Capable of 4.5 V gate drive • Low input capacitance: Ciss = 1350 pF typ • AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 123 1G Preliminary Datasheet R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10μs duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4.
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