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RJK0632JPD - Silicon N-Channel MOS FET

General Description

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Key Features

  • For Automotive.

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Datasheet Details

Part number RJK0632JPD
Manufacturer Renesas
File Size 103.29 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet RJK0632JPD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK0632JPD 60 V, 20 A Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 29 mΩ typ. • Capable of 4.5 V gate drive • Low input capacitance : Ciss = 440 pF typ. Outline Preliminary Datasheet R07DS0342EJ0200 Rev.2.00 Oct 16, 2014 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 2, 4 D 123 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3.