RJK0632JPD Description
RJK0632JPD 60 V, 20 A Silicon N Channel MOS FET High Speed Power Switching.
RJK0632JPD Key Features
- For Automotive application
- AEC-Q101 pliant
- Low on-resistance : RDS(on) = 29 mΩ typ
- Capable of 4.5 V gate drive
- Low input capacitance : Ciss = 440 pF typ