RJK0631JPD Description
RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching.
RJK0631JPD Key Features
- For Automotive application
- Low on-resistance : RDS(on) = 12 mΩ typ
- Capable of 4.5 V gate drive
- Low input capacitance: Ciss = 1350 pF typ
- AEC-Q101 pliant