RJK4513DPE Overview
RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching.
RJK4513DPE Key Features
- Low on-resistance RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching REJ03G1586-0100 Rev.1.00 Dec 08, 2009