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RJK4532DPH-E0 - High Speed Power Switching MOS FET

Description

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Features

  • Low on-state resistance RDS(on) = 1.9  typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High speed switching Outline.

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Datasheet Details

Part number RJK4532DPH-E0
Manufacturer Renesas
File Size 93.39 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK4532DPH-E0 Datasheet
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Full PDF Text Transcription

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RJK4532DPH-E0 450V - 4A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.9  typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 G 12 3 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAP Note3 EAR Note3 Pch Note 2 Channel to case thermal Impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. Pulse width limited by safe operating area. 2.
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