Click to expand full text
RJK4513DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching REJ03G1586-0100 Rev.1.00 Dec 08, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
www.DataSheet.co.kr
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
RJK4513DPE Datasheet
