RJP60D0DPE
RJP60D0DPE is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
- Gate to emitter voltage rating 30 V
- Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
C 4
G 1 2 3 E
1. Gate 2. Collector 3. Emitter 4. Collecotor
.DataSheet.co.kr...
