RJP60D0DPM
RJP60D0DPM is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)
- Gate to emitter voltage rating 30 V
- Pb-free lead plating and chip bonding R07DS0088EJ0200 Rev.2.00 Nov 16, 2010
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
1. Gate 2. Collector 3. Emitter
E 1
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