RQJ0602EGDQA Description
RQJ0602EGDQA Silicon P Channel MOS FET Power Switching.
RQJ0602EGDQA Key Features
- Low on-resistance RDS(on) = 490 mΩ typ (VGS = -10 V, ID = -0.55 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- Part: RQJ0602EGDQA
- Manufacturer: Renesas (official site)
- Size: 120.58 KB
