UPA2200T1M Datasheet - Renesas

N-CHANNEL MOS FET

* Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)

* Built-in gate protection diode

* 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT No

UPA2200T1M

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N-channel mos fet.

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UPA2200T1M N-CHANNEL MOS FET Renesas

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