UPA2200T1M fet equivalent, n-channel mos fet.
* Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A)
* Built-in gate protection diode
* 4.5 V .
of portable equipments, such as load switch.
FEATURES
* Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, .
Image gallery
Download