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UPA2200T1M Datasheet N-CHANNEL MOS FET

Manufacturer: Renesas

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General Description

The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

Overview

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR.

Key Features

  • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A).
  • Built-in gate protection diode.
  • 4.5 V Gate drive available.

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