UPA2592T1H Datasheet | Renesas

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2592T1H N- AND P-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The μ PA2592T1H is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 Features - 2.5 V drive available - Low on-state resistance N-channel RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2 A) RDS(on)2 = 65 mΩ MAX. (VGS = 2.5 V, ID = 2 A) P-channel RDS(on)1 = 80 mΩ MAX. (VGS = - 4.5 V, ID = - 2 A) RDS(on)2 = 140 mΩ MAX. (VGS = - 2.5 V, ID = - 1 A) - Built-in gate protection diode - Small and surface mount package (8-pin VSOF (2429)) 0.8±0.05 1 0.32±0.05 4 0.05 M S A (0.3) N-channel 1: Source 2: Gate 7, 8: Drain P-channel 3: Source 4: Gate 5, 6: Drain ORDERING INFORMATION PART NUMBER μ PA2592T1H-T1-AT Note μ PA2592T1H-T2-AT Note LEAD PLATING Pure...