UPA2592T1H Datasheet | Renesas

DESCRIPTION The μ PA2592T1H is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 FEATURES - 2.5 V drive available - Low on-state resistance N-channel RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2 A) RDS(on)2 = 65 mΩ MAX. (VGS = 2.5 V, ID = 2 A) P-channel RDS(on)1 = 80 mΩ MAX. (VGS = - 4.5 V, ID = - 2 A) RDS(on)2 = 140 mΩ MAX. (VGS = - 2.5 V, ID = - 1 A) - Built-in gate protection diode - Small and surface mount package (8-pin VSOF (2429)) 0.8±0.05 1 0.32±0.05 4 0.05 M S A (0.3) N-channel 1: Source 2: Gate 7, 8: Drain P-channel 3: Source 4: Gate 5, 6: Drain ORDERING INFORMATION PART NUMBER μ PA2592T1H-T1-AT Note μ PA2592T1H-T2-AT Note LEAD PLATING Pure Sn PACKING 8 mm embossed taping 3000 p/reel PACKAGE 8-pin VSOF (2429) Note Pb-free (This product does not contain Pb in the external electrode and other parts.) Marking: 2592 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G20215EJ1V0DS00 (1st edition) Date Published February 2010 NS Printed in Japan μ PA2592T1H ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PARAMETER...