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UPA2806 - MOS FIELD EFFECT TRANSISTOR

Renesas

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Datasheet Details

Part number	UPA2806
Manufacturer	Renesas ↗
File Size	251.54 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2806_Renesas.pdf

UPA2806 Product details

Description

R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.

Features

Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A).
Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz).
Built-in gate protection diode.
Thin type surface mount package with heat spreader (8-pin HVSON).
RoHS Compliant Ordering Information Part No. LEAD.

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Published: Sep 17, 2013 |