UPA2811T1L - MOS FIELD EFFECT TRANSISTOR

Renesas

UPA2811T1L Datasheet Preview — Preview of UPA2811T1L PDF

Datasheet Details

Part number	UPA2811T1L
Manufacturer	Renesas ↗
File Size	242.49 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2811T1L_Renesas.pdf

UPA2811T1L Product details

Description

R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Features

VDSS.
30 V (TA = 25°C).
Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS =.
10 V, ID =.
19 A).
4.5 V Gate-drive available.
Built-in gate protection diode.
Small & thin type surface mount package with heat spreader (8-pin HVSON).
Halogen free and RoHS compliant Ordering Information Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD.

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Published: Sep 17, 2013 |